In grad school, I spent 4 years in Cornell's cleanroom fabricating the three-terminal SOT-MRAM devices (picture) using Deep-UV and e-beam lithography.
At Raytheon BBN, as a PI, I led a project to develop a state-of-the-art fabrication process for MRAMs.
At Raytheon BBN, I designed the crygonetic memory array combining the superconducting switching device hTron with the magnetic memory element MRAM. The array is addressed by superconducting word and bit lines.
The layout was drawn programmatically using Python to avoid current crowding issue in superconducting wires. The geometry of the wires is determined by HFSS simulation to ensure good transmisison lines. The circuit was successfully fabricated and the results are published here.
At Western Digital, I ran a couple of high-impact projects in fabricating the notoriously complicated HAMR Writer. HAMR (Heat-assisted magnetic recording) technology is an intricate combination of magnetism, photonics and thermal dynamics. Its fabrication demands very small feature sizes (at the limits of photolithography) in 3D shapes with tight specs. I worked closely with cross-functional groups in a production fab: design, metrology, thin films and lithography.
I have hands-on experience performing thin film magnetic and surface characterization:
Ferromagnetic resonance, vibrating sample and SQUID magnetometry
Scanning electron microscopy
X-ray diffractometry
Atomic force microscopy